mosfet 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1gate 2 source 3 drain 2SK1657 features directly driven by ics having a 3v power supply. has low gate leakage current i gss = 5na max.@v gs= 3.0v absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 7 v drain current (dc) i d 100 ma drain current(pulse) * i d 200 ma power dissipation p d 200 m w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10ms, duty cycle 5% electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =30v,v gs =0 1.0 a gate leakage current i gss v gs = 3.0v,v ds =0 5.0 na gate to source cutoff voltage v gs(off) v ds =3.0v,i d =1 a 0.9 1.2 1.5 v forward transfer admittance y fs v ds =3.0v,i d =10ma 20 40 ms v gs =2.5v,i d =10ma 25 45 v gs =4.0v,i d =10ma 18 25 input capacitance c iss 15 pf output capacitance c oss 10 pf reverse transfer capacitance c rss 1.5 pf turn-on delay time t d(on) 95 ns rise time t r 360 ns turn-off delay time t d(off) 150 ns fall time t f 150 ns v ds =3.0v,v gs =0,f=1mhz i d =10ma,v gs(on) =3v,r l =300 ,v dd =3.0v,r g =10 drain to source on-state resistance r ds(on) marking marking g19 smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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